In the paper, an improved method for the simultaneous determination of GaAs FET noise figure and available power gain is given a method for the design of loss matching network and quantitative analysis of its loss is also presented. 本文给出了可同时测量GaAsFET噪声系数和资用功率增益的改进方法,以及对有耗匹配网络设计和损耗的定量分析方法。
Determination of GaAs Microwave FET Noise Figure and Available Power Gain GaAsFET噪声系数和资用功率增益的测定
Power VDMOS ( Vertical Double-Diffusion MOSFET) is the most favorable device available for high speed, medium power applications because of its characteristics such as high input impedance, high power gain, easy to drive and good thermal stability. 功率VDMOS(垂直双扩散MOSFET)以其高输入阻抗、高功率增益、驱动电路简单和热稳定性好等优点,在高速度和中等功率场合得到了广泛的应用。